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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage Open emitter OND IC CONDITIONS TOR UC VALUE 180 120 6 10 UNIT V V V A W ae ae Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1116 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 180 V Emitter-base breakdown voltage 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=180V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain fT Transition frequency ANG CH IC=3A ; VCE=4V 50 IC=1A ; VCE=12V IN EMIC ES DUC ON 10 TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1116 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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